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RTP

Lead is an expert in the field of semiconductor furnace
equipment manufacturing and refurbishment.

The Only VULCAN RTP Equipment That Can Satisfy Customers

A single RTP equipment that can satisfy customers.

Wafer Size
6”~8”
Maximum Temperature
300~1400℃
Temperature Uniformity
300~1250℃ ± 1℃
Applicable Process
  • RTA (Rapid Thermal Anneal)
  • RTS (Rapid Thermal Silicide)
Items Specifications
Temp. Control Range 300 ~ 1400°C
Temp. Control Accuracy ≤ ± 1.0°C
Ramp Up Rate ≥ 100°C/sec
Ramp Down Rate ≤ 50°C/sec
Temperature Sensor 1 ea of pyrometer
No. of Lamps 38 ea
Type of Lamp Tungsten-Halogen “I” lamp
Target Material Silicon & SiC wafer (150, 200mm)
Gas Std. N2, O2, NH3
System Configuration TM + RTP Chamber