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RTP

반도체 Furnace 장비 제조 및 Refurbish 분야 전문가 리드

The only VULCAN RTP equipment that can satisfy customers

고객이 만족 할 수 있는 단하나의 RTP 장비

Wafer Size
6”~8”
Maximum Temperature
300~1400℃
Temperature uniformity
300~1250℃ ± 1℃
Applicable Process
  • RTA (Rapid Thermal Anneal)
  • RTS (Rapid Thermal Silicide)
Items Specifications
Temp. control range 300 ~ 1400°C
Temp. control accuracy ≤ ± 1.0°C
Ramp up rate ≥ 100°C/sec
Ramp down rate ≤ 50°C/sec
Temperature sensor 1ea of pyrometer
No. of lamp 38ea
Type of lamp Tungsten-Halogen “I” lamp
Target Material Silicon & SiC wafer (150, 200mm)
Gas Std. N2, O2 , NH3
System Configuration TM + RTP Chamber